Complex Oxide Heterostructures: A flexible buffer approach for Germanium integration on Silicon
by
Thomas Schroeder, IHP-Microelectronics/Materials Research, Frankfurt (Oder)
→
Europe/Berlin
Bldg. 25b, room 109
Bldg. 25b, room 109
Description
Silicon – Germanium (SiGe) heterostructures on Si achieved in the past a great level of technological maturity and are nowadays widely accepted as CMOS compatible materials systems to increase the performance and functionality of Si – based microelectronics. Materials research focuses nowadays on the integration of SiGe heterostructures with low defect levels and high Ge content up to 100%. For example, in the field of highly integrated Si based microelectronics, the integration of Ge as high mobility channel material in combination with high-k gate oxides is intensively pursued to manufacture sub - 50 nm CMOS technologies.
Another example is given by Ge photodetectors for on-chip data communication systems due to the superior optical properties of Ge with respect to Si. Furthermore, the successful integration of Ge on Si is also intensively discussed to achieve the manufacturing of III-V / Si hybrid devices (due to the very low lattice as well thermal misfit between GaAs and Ge). It must however be pointed out that, to the best of our knowledge, the quality of the up to nowadays available pure Ge heterostructures on Si did not yet achieve the level of technological relevance. Innovative buffer concepts are needed to reduce defect levels to an acceptable level. In my talk, the high functionality of engineered mixed buffer oxide heterostructures to achieve the global integration of single crystalline Ge layers on Si by MBE & CVD will be addressed.
Special emphasize is devoted to the use of complex Synchrotron – based X-ray diffraction studies to unveil the structure and defect characteristics of these nano-scaled thin film heterostructures.
