Speaker
Marco Bomben
(LPNHE)
Description
After a brief introduction of TCAD simulations for silicon sensors, I will present the possibilities offered by combining this kind of simulations together with testbeam data. In particular I will focus on measurements and simulations concerning highly irradiated silicon sensors and I will show how to extract information about the trapping constant and the electric field profile.
Estimated length in minutes
25
Primary author
Marco Bomben
(LPNHE)
