Aristov V.Yu.1,2, Molodtsova O.V.1,3, Babenkov S.V.1,4, Potorochin D.V.1,3, and Chaika A.N.2
1Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
2Institute of Solid State Physics of the Russian Academy of Sciences, Chernogolovka, Russia
3ITMO University, Saint Petersburg, Russia
4JohannesGutenberg-Universität, Mainz, Germany
The graphene synthesis on low-cost cubic-SiC/Si(001) wafers represents a realistic method for mass production of graphene layers suitable for electronic applications and compatible with existing silicon technologies. The graphene grown on such substrate typically exhibits nanometer-sized domains with different lattice orientations [1]. Here we present the in-situ investigation of layer-by-layer graphene growth on the cubic-SiC/Si(001) wafers. The measurements were performed by means of a number of methods: scanning tunneling microscopy with atomic resolution, low-energy electron microscopy (LEEM), high-resolution laterally-resolved X-ray photoelectron spectroscopy (µ-XPS), angle-resolved photoelectron spectroscopy (µ-ARPES), and micro low-energy electron diffraction (µ-LEED) [2]. The experimental data evidence the opportunity to control the local thickness of the graphene overlayer on the silicon carbide substrate in-situ during UHV synthesis. Significantly, presented data disclose the mechanisms of the surface transformation and layer-by-layer graphene growth on cubic-SiC/Si(001) in UHV at high temperatures. Finally, we will briefly report the electronic structure, transport and magnetic properties of such continuous and uniform nanostructured few-layer graphene with self-aligned nano-domain boundaries synthesized by the method above [1-3].
References
1. A.N. Chaika, V.Yu. Aristov & O.V. Molodtsova, Progress Mater. Sci. 89 (2017) 1–30.
2. V.Yu. Aristov, A.N. Chaika, O.V. Molodtsova et al., ACS Nano 13 (2019) 526-535.
3. H.-C. Wu, A.N. Chaika, M.-C. Hsu, T.-W. Huang, Mour. Abid, Moh. Abid, V.Yu. Aristov, O.V. Molodtsova, S.V. Babenkov, Y. Niu, B.E. Murphy, S.A. Krasnikov, O. Lubben, H. Liu, B.S. Chun, Y.T. Janabi, S.N. Molotkov, I.V. Shvets, A.I. Lichtenstein, M.I. Katsnelson, C.-R. Chang, Nature Commun. 8 (2017) 14453.