Gamma profiler




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Meeting ID: 666 4572 2791

Passcode: 538952

    • 11:30 AM 12:15 PM
      General Info 45m
      • Report and discussion on Patch Panel
      Speakers: Marco Bruschi (INFN and University of Bologna), Umberto Dosselli (Padova), Gianluca Sarri (Queen's University Belfast)
    • 12:15 PM 1:00 PM
      Test Beam 45m
      • Plans for the first Test Beam at LNF
      Speakers: Umberto Dosselli (Universita e INFN,Padova (IT)), Marco Bruschi (INFN and University of Bologna), Mauro Morandin (None), Pietro Grutta (University of Padova)
    • 1:00 PM 1:01 PM
      MC report 1m
      Speaker: Pietro Grutta (University of Padova)

      MC for GBP. Priority list


      1. Dose for the electronics placed nearby the gamma beam horizontal plane
        • (4/5) Kyle will prepare a neutrons map of irradiation of the area where the mini-crate is going to be placed.
      2. Hadronic interactions on the profile reconstruction
        • Results: energy deposited is 30% higher. Main conclusions of the TN still valid.
      3. Best distance between the I and II station (min/max distance d_1, d_2)
      4. Check that 10um W foil in gamma spectrometer is included in lxsim [yes]
      5. Check that 200um Kapton - Al window at the beam pipe exit window in accounted [yes]
      6. Thermal stress on the detectors and on the beam pipe exit window (200um Kapton/Al)
        • Not a problem for the Kapton (link101) (link102). Therefore, thermal stresses on the sapphire detectors is expected to be neglibible.
        • However, temperature variations over time are important since they affect local charge carriers mobility in sapphire. A temperature map for a representative set of \xi values (i.e. \xi=3, 10) is necessary to evaluate this effect.

      Sapphire pads test at BTF of the LNF (Frascati May 9-11 2022)

      1. Geometry of the setup (link201)
        1. Two aligned sapphire wafers of thickness 110um and 150um respectively.
        2. Each wafer has 2 large pads (diameter d=5.50mm) and 2 smaller ones (d=1.60mm).
        3. The two wafers are mounted on identical PCBs, which are contained in a 3mm-thick zamak box of size 19x19x7mm. This assembly will be referred as device under test (DUT for short).
        4. The circuits are aligned, in other words for example if the beam center targets the large pad of the 110um then also the 150um's large pad will be intercepted by the electrons beam.
        5. In the beamline there are few other materials:
          1. 30cm 55cm upstream the device, a 50um-thick Ti layer (nominal/measures values)
          2. 10cm 22cmupstream the device, a 300+400um Si layer (nominal/measures values)
      2. Characteristics of the test beam (link202) (link203)
      3. Estimating the expected signal with Geant4+Allpix2 (link204
      4. Dose received for each beam configuration (intensity, spatial distribution)

      Allpix2 validation with DESY-II data

      Presented in the mini-workshop on sapphire (link301)

      Padova experiments with the alpha source and sapphire 110/150 um

      Presented in the mini-workshop on sapphire (link301)

      1. Energy loss in air/metallization/sapphire, spatial distribution of energy depositions in DUT
      2. Model the charge propagation in sapphire using CCE data and Allpix2