Speaker
Description
Gallium arsenide is extensively studied for about seven decades as an excellent material for
semiconductor lasers, LEDs, and microwave electronics. GaAs has noticeable advantages over silicon
and Cd(Zn)Te for radiation detectors. Particularly GaAs has higher electron mobility compared to Si
and Cd(Zn)Te; higher average atomic number compared to Si; and lower probability and energy of the
fluorescence photons compared to the Cd(Zn)Te [1]. These advantages result in a fast charge
collection, good absorption efficiency up to 50 keV and a better uniformity compared to Cd(Zn)Te.
Applications for the GaAs are foreseen in medical, mammography, small animal imaging, electron
microscopy, synchrotrons, XFELs and non-destructive testing of composite materials. (see PDF for complete abstract please)
