3–6 Nov 2025
GSI
Europe/Berlin timezone

Development of Ultra-broadband Direct THz Detectors based on Schottky diodes and AlGaAs/GaAs FETs for Longitudinal Beam Diagnostics

4 Nov 2025, 10:15
15m
KBW Lecture Hall - main room (GSI)

KBW Lecture Hall - main room

GSI

Speaker

Rahul Yadav (Terahertz Devices and Systems, IMP , TU Darmstadt)

Description

Many currently operating and future FELs can generate broadband radiation at MHz repetition rates, requiring a fast diagnostic tool (response time at least on a single-digit ns scale), ultra-broadband, & robustness. We develop ultrafast-operating THz detectors based on Schottky diodes and field-effect transistors (FET) operating at room temperature.
We present four critical features of our newly developed detectors:(1) frequency coverage: ultra-broadband single-pixel THz detectors (based on both technologies) covering 0.05 to 54.8 THz, which essentially covers full operational spectral range of the ELBE facility in Dresden-Rossendorf, Germany, (2) ultra-wide band IF bandwidth up to ~50 GHz: this enables single shot detection of ps-scale THz pulses with response time in ps range (overcome the pile up issue faced by its counterparts), (3) bunch compression monitoring capability from single-digit pC to ~220 pC: this is essential for precise machine settings for desired beam parameter output, and (4) Radiation hardness examination of the developed detectors for their smooth operation at accelerator facilities. These detectors can be implemented at other accelerators and FEL facilities.

Presentation materials