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Description
High time resolution and granularity are becoming more and more important for particle detectors.
Driven by continuous advancement in CMOS Technology, new application specific integrated circuits (ASICs) are developed meeting the requirements for the new generations of particle detectors. Monolithic detectors having sensor and frontend electronics on one silicon die are becoming more widespread and facilitate integration in detector systems.
This work concentrates on ANDESPix, a digital silicon photomultiplier (SiPM) ASIC designed to readout scintillating fibers with low light intensity, as part of a muon detector, following the same muon detection principle used for muon detectors at the Pierre Auger Observatory and applied in the future ANDES Laboratory.
Thereby, photons should be detected with very high time resolution (<100 ps) in order to identify impinging muons and their time of arrival on the muon detector. In ANDESPix each single photon avalanche diode (SPAD) has its own digital readout containing a time-to-digital converter (TDC). The zero-suppressed digital readout allows to receive detailed timing and spatial information of incoming photons. This may lead to better understanding of their nature and increased detector efficiency, as e.g. improved fiber alignment to the SiPM.
ANDESPix is designed in 110 nm CMOS technology from LFoundry (LF11IS). This technology includes a SPAD cell for the wavelength range from 400nm to 850nm with high photon detection efficiency (PDE) and low dark count rate (DCR) developed by Fondazione Bruno Kessler (FBK).
Initial measurements have confirmed the general functionality of ANDESPix and results in the area of DCR and the characteristics of the TDC have already been collected.
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