ACHTUNG! Indico Wartung mit Dienstunterbrechung am Donnerstag dem 16.12.2021 von 10:00 Uhr - 11:00 Uhr (CET). Bitte beenden Sie ihre Arbeit rechtzeitig um Datenverlusten vorzubeugen!
ATTENTION! Indico Maintenance with downtime on Thu 16 Dec 2021, 10 - 11h CET. Please finish your work in time to prevent data loss!

Structure-property correlation of epitaxially grown self-assembled semiconductor quantum dots

by Arka Bikash Dey (FS-PETRA-D (FS-PET-D Fachgruppe P08))


Single-layer quantum materials are predicted to deliver properties on-demand with interface engineering playing a decisive role in tuning of structure-property correlation. Among these emerging materials quantum dots (QDs) confine electrons and holes from all three directions giving atom-like energy levels and can deliver wavelength-tunable quantum photonic devices.

Due to avoiding irradiation-related loss and unwanted damage, the QDs layer always needs to be protected by the cap layer. Effect of the cap-layer thickness on buried QDs structure and their optical properties will be shown using x-ray grazing incidence diffraction (GID), x-ray standing wave (XSW) and photoluminescence (PL) techniques.