Speaker
Description
Silicon Photomultiplier SiPM detectors have become the preferred photosensors for many applications in high-energy particle and astroparticle physics, LIDAR and medical imagining. Due to robustness, low working voltage, ability to work during moon light and high photon detection efficiency the SiPM devices are good choice for cameras of Imaging Atmospheric Cherenkov Telescopes (IACTs) as pioneering works of FACT and SST-1M demonstrated. However, the overvoltage (difference between applied and breakdown voltages) effects almost all device parameters like gain, PDE, uncorrelated and correlated noise. In particular, by increasing the overvoltage the high PDE of 60% can be reached. On the other had high overvoltage leads to higher correlated noise what affects image reconstruction.
In this work we study the effect of SiPM correlated noise and PDE into IACT in therm of charge resolution. With the goal to find the optimal overvoltage value which provides the best balance between PDE and correlated noise. The study was done with Monte Carlo simulation (i.e. sim_telarray – simulation of the imaging atmospheric Cherenkov technique) and validated with measurements at laboratory with calibrated light sources (one to mimic Cherenkov light and another for night sky background NSB). The studies were performed for SiPM devices produced by Hamamatsu: S13360-3050, S14520-3050 and FBK HD-NUV. The studies were performed at different NSB levels from 3MHz up to 1 GHz of photons per sensor at room temperature (T = 25 C).
Keywords
SiPM, Cherenkov Telescopes, Cross-talk, photon detection efficiency, night sky background
| Subcategory | Experimental Methods & Instrumentation |
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