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We report the fabrication of SrTiO3 thin films doped by Ni and its influence on the electronic structure. The SrTiO3 thin films were deposited by magnetron sputtering which is suitable for mass-production of samples adapted for nanoelectronic applications. The structure of the STO:Ni was investigated by XRD phase analysis. We evaluated the influence of Ni on crystallinity, the size of coherent diffract areas, and micro-stress in the lattice of STO as a function of Ni concentration[1]. The second part of the presentation deals with the study of the electronic band structure of STO films doped with Ni, high-quality ordered pristine and SrTiO3:Nix films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations performed by using the Korringa-Kohn-Rostoker Greens's function method, predicted the formation of localized 3d-impurity bands in the bandgap of SrTiO3 close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion are in agreement with theory[2].
References:
1. Z. Jansa, L. Prusakova, F. Alarab, P. Sutta; Structural analysis of Ni-doped SrTiO3: XRD study, AIP Conference Proceedings 2131(1):020022, July 2019
2. F. Alarab, K. Hricovini, B. Leikert, L. Nicolai, M. Fanciulli, O. Heckmann, Ch. Richter, L. Prušáková, Z. Jansa, P. Šutta, J. Rault, P. Lefevre, M. Muntwiller, R. Claessen, and J. Minár; Photoemission study on pristine and Ni-doped SrTiO3 thin films, Materials Science, arXiv:2011.12684, November 2020
