Speaker
Description
MoS$_2$ has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, the demonstration of resistively detected electron spin resonance (RD-ESR) and the determination and improved physical understanding of the g factor are of great importance. However, its application and RD-ESR studies have been limited so far by Schotttky or high-resistance contacts to MoS$_2$. Here, we exploit naturally n-doped few-layer MoS$_2$ devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS$_2$ devices. Using RD-ESR, we determine the g factor of few-layer MoS$_2$ to be $\approx$1.92 and observe that the g factor value is independent of the charge carrier density within the limits of our measurements.
